(Singapore)
Product Summary
The HY27UF084G2M-TPCB is a 512M×8bit NAND Flash with spare 16M×8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UF084G2M-TPCB contains 4096 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
Parametrics
HY27UF084G2M-TPCB absolute maximum ratings: (1)TA, Ambient Operating Temperature (Commercial Temperature Range): 0 to 70 ℃; Ambient Operating Temperature (Extended Temperature Range): -25 to 85 ℃; Ambient Operating Temperature (Industry Temperature Range): -40 to 85 ℃; (2)TBIAS Temperature Under Bias: -50 to 125℃; (3)TSTG Storage Temperature: -65 to 150 ℃; (4)VIO(2) Input or Output Voltage: -0.6 to 4.6 V; (5)Vcc Supply Voltage: -0.6 to 4.6 V.
Features
HY27UF084G2M-TPCB features: (1)high density nand flash memories: Cost effective solutions for mass storage applications; (2)nand interface: ×8 width; Multiplexed Address/ Data; Pinout compatibility for all densities; (3)Memory Cell Array= (2K+ 64) Bytes × 64 Pages × 4,096 Blocks; (4)page read / program: Random access: 25us (max.); Sequential access: 30ns (min.); Page program time: 200us (typ.); (5)copy back program mode: Fast page copy without external buffering; (6)cache program mode: Internal Cache Register to improve the program throughput; (7)fast block erase: Block erase time: 2ms (Typ.).
Diagrams
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