(Singapore)
Product Summary
The JS28F256P30B95 is a StrataFlash Embedded Memory. Offered in 64-Mbit up through 512-Mbit densities, the JS28F256P30B95 brings reliable, two-bit-per-cell storage technology to the embedded flash market segment. Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR device, and supports for code and data storage. Features of the JS28F256P30B95 include high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry standard package choices.
Parametrics
JS28F256P30B95 absolute maximum ratings: (1)Temperature under bias: –40 to +85℃; (2)Storage temperature: –65 to +125℃; (3)Voltage on any signal (except VCC, VPP and VCCQ): –0.5 V to +4.1 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +4.1 V; (7)Output short circuit current: 100 mA.
Features
JS28F256P30B95 features: (1)85 ns initial access; (2)52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode; (3)25 ns asynchronous-page read mode; (4)4-, 8-, 16-, and continuous-word burst mode; (5)Buffered Enhanced Factory Programming (BEFP) at 5 μs/byte (Typ); (6)1.8 V buffered programming at 7 μs/byte (Typ); (7)Multi-Level Cell Technology: Highest Density at Lowest Cost; (8)Asymmetrically-blocked architecture; (9)Four 32-KByte parameter blocks: top or bottom configuration; (10)128-KByte main blocks.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 JS28F256P30B95A |
|
IC FLASH 256MBIT 95NS 56TSOP |
Data Sheet |
Negotiable |
|
||||
|
JS28F256P30B95B |
|
IC FLASH 256MBIT 95NS 56TSOP |
Data Sheet |
Negotiable |
|
||||
