(Singapore)
Product Summary
The K4B1G1646E-HCH9 is a 1Gb E-die DDR3 SDRAM. The K4B1G1646E-HCH9 is organized as a 32Mbit × 4 I/Os × 8banks, 16Mbit × 8 I/Os × 8banks or 8Mbit × 16 I/Os × 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The K4B1G1646E-HCH9 is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .
Parametrics
K4B1G1646E-HCH9 absolute maximum ratings: (1)VDD, Voltage on VDD pin relative to Vss: -0.4 V ~ 1.975 V; (2)VDDQ, Voltage on VDDQ pin relative to Vss: -0.4 V ~ 1.975 V; (3)VIN, VOUT, Voltage on any pin relative to Vss: -0.4 V ~ 1.975V; (4)TSTG, Storage Temperature: -55 to +100℃.
Features
K4B1G1646E-HCH9 features: (1)JEDEC standard 1.5V ± 0.075V Power Supply; (2)VDDQ = 1.5V ± 0.075V; (3)400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin; (4)8 Banks ; (5)Posted CAS; (6)Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10, 11; (7)Programmable Additive Latency: 0, CL-2 or CL-1 clock; (8)Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600); (9)8-bit pre-fetch; (10)Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]; (11)Bi-directional Differential Data-Strobe; (12)Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%); (13)On Die Termination using ODT pin; (14)Asynchronous Reset; (15)All of Lead-Free products are compliant for RoHS; (16)All of products are Halogen-free.
Diagrams
