(Singapore)
Product Summary
The K6R4016V1D-UI10 is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4016V1D-UI10 uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The K6R4016V1D-UI10 is fabricated using SAMSUNG advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1D-UI10 is packaged in a 400 mil 32-pin plastic SOJ.
Parametrics
K6R4016V1D-UI10 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS VIN, VOUT: -0.5 to 4.6 V; (2)Voltage on VCC Supply Relative to VSS VCC: -0.5 to 4.6 V; (3)Power Dissipation PD: 1.0 W; (4)Storage Temperature TSTG: -65 to 150 ℃; (5)Operating Temperature Commercial TA: 0 to 70 ℃; Industrial TA: -40 to 85 ℃.
Features
K6R4016V1D-UI10 features: (1)Fast Access Time 8,10ns(Max.); (2)Low Power Dissipation; (3)Single 3.3.3V Power Supply; (4)TTL Compatible Inputs and Outputs; (5)Fully Static Operation- No Clock or Refresh required; (6)Three State Outputs; (7)Center Power/Ground Pin Configuration; (8)Operating in Commercial and Industrial Temperature range.
Diagrams
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